METHOD FOR MEASURING ETCHING AMOUNT, AND MEASUREMENT SYSTEM THEREFOR

The present invention addresses the problem of providing a novel technology for measuring an etching amount in heat treatment in which growth and etching proceed simultaneously. The present invention includes: a first substrate thickness measuring step S10 for measuring the thickness 10D of a to-be-heat-treated semiconductor substrate 10; a second substrate thickness measuring step S20 for measuring the thickness 20D of a heat-treated semiconductor substrate 20; a growth layer thickness measuring step S30 for measuring the thickness 21D of a growth layer 21 which has gone through crystal growth by heat treatment; and an etching amount calculating step S40 for calculating the etching amount ED on the basis of the thickness 10D of the to-be-heat-treated semiconductor substrate 10, the thickness 20D of the heat-treated semiconductor substrate 20, and the thickness 21D of the growth layer 21.