THERMALLY CONDUCTIVE WAFER LAYER

In described examples, a method comprises forming a patterned region on a first surface of the semiconductor substrate. The method also comprises forming circuitry in the patterned region. The method further comprises forming a metallic layer on a second surface of the semiconductor substrate, in wh...

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Bibliographische Detailangaben
Hauptverfasser: VENUGOPAL, Archana, COOK, Benjamin, Stassen, REVIER, Daniel, Lee, DADVAND, Nazila
Format: Patent
Sprache:eng ; fre ; ger
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Beschreibung
Zusammenfassung:In described examples, a method comprises forming a patterned region on a first surface of the semiconductor substrate. The method also comprises forming circuitry in the patterned region. The method further comprises forming a metallic layer on a second surface of the semiconductor substrate, in which the second surface opposes the first surface; and forming a carbon layer on the metallic layer.