DEVICE FOR PRODUCING A SINGLE CRYSTAL

The invention relates to a device (1) for producing a single crystal, in particular a sapphire single crystal, comprising a crucible (2) for receiving starting material that is to be melted, in particular aluminum(III) oxide, and at least a first heating element (5) for heating the starting material...

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Bibliographische Detailangaben
Hauptverfasser:	PARK, Jong Kwan, EBNER, Robert, SEN, Gourav, BARBAR, Ghassan
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The invention relates to a device (1) for producing a single crystal, in particular a sapphire single crystal, comprising a crucible (2) for receiving starting material that is to be melted, in particular aluminum(III) oxide, and at least a first heating element (5) for heating the starting material, a heat diffuser element (9) being arranged between the first heating element (5) and the crucible (2).