METHOD FOR TRACKING THE CRYSTAL GROWTH OF A SINGLE CRYSTAL

The invention relates to a method for tracking the crystal growth of a single crystal in a device (1) for producing a single crystal, wherein the single crystal is produced by melting a crucible filling (6) composed of a raw material in a crucible (2) and then cooling the melt, wherein a property of...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	PARK, Jong Kwan, EBNER, Robert, SEN, Gourav, BARBAR, Ghassan
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The invention relates to a method for tracking the crystal growth of a single crystal in a device (1) for producing a single crystal, wherein the single crystal is produced by melting a crucible filling (6) composed of a raw material in a crucible (2) and then cooling the melt, wherein a property of the crucible filling (6) is determined by means of a beam (5), and wherein the beam (5) composed of electromagnetic radiation or a mechanical vibration is irradiated into the crucible filling (6) through the crucible (2).