TIME OF FLIGHT SENSOR AND METHOD FOR FABRICATING A TIME OF FLIGHT SENSOR

TIME OF FLIGHT SENSOR AND METHOD FOR FABRICATING A TIME OF FLIGHT SENSOR

A time of flight sensor comprises at least one pixel, comprising: a Si-based photocurrent collecting structure (110) and a Ge-based photosensitive structure (120) epitaxially grown on the photocurrent collecting structure, wherein the photocurrent collecting structure comprises an n-doped region (11...

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Bibliographische Detailangaben
Hauptverfasser: TADDIKEN, Hans, OFFENBERG, Dirk, ROTHENHAEUSSER, Steffen, PINNAPA, Trinath Reddy
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A time of flight sensor comprises at least one pixel, comprising: a Si-based photocurrent collecting structure (110) and a Ge-based photosensitive structure (120) epitaxially grown on the photocurrent collecting structure, wherein the photocurrent collecting structure comprises an n-doped region (111) and a p-doped region (112), wherein the n-doped region is configured to conduct electrons of a photocurrent to at least one n-contact (130) and wherein the p-doped region is configured to conduct holes of the photocurrent to at least one p-contact (140) and wherein the conduction band in the p-doped region comprises a barrier for the electrons of the photocurrent and the valence band in the n-doped region comprises a barrier for the holes of the photocurrent.