NANOCRYSTALLINE BORON NITRIDE FILM, IMAGE SENSOR INCLUDING THE SAME, FIELD EFFECT TRANSISTOR INCLUDING THE SAME, AND METHOD OF FABRICATING THE NANOCRYSTALLINE BORON NITRIDE FILM

NANOCRYSTALLINE BORON NITRIDE FILM, IMAGE SENSOR INCLUDING THE SAME, FIELD EFFECT TRANSISTOR INCLUDING THE SAME, AND METHOD OF FABRICATING THE NANOCRYSTALLINE BORON NITRIDE FILM

Disclosed is a nanocrystalline boron nitride film having a relatively low dielectric constant and excellent mechanical properties. The nanocrystalline boron nitride film includes a crystalline boron nitride compound, and has a dielectric constant within a range of 2.5 to 5.5 at a 100 kHz operating f...

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Bibliographische Detailangaben
Hauptverfasser: KIM, Minsu, SHIN, Hyeonsuk, CHOI, Taejin, SHIN, Hyeonjin
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Disclosed is a nanocrystalline boron nitride film having a relatively low dielectric constant and excellent mechanical properties. The nanocrystalline boron nitride film includes a crystalline boron nitride compound, and has a dielectric constant within a range of 2.5 to 5.5 at a 100 kHz operating frequency.