METHOD FOR PROCESSING GALLIUM OXIDE SUBSTRATE
Provided is a practical method for processing a gallium oxide substrate that enables the gallium oxide substrate to be cut vertically and horizontally in a lattice shape. Mechanical scribing processing in which a cut groove is engraved on a main plane by a scribing tool along a planned cutting line...
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| creator | TSUJIMOTO, Yuki KITAICHI, Mitsuru ASAI, Yoshiyuki OKAMOTO, Hirokazu |
| description | Provided is a practical method for processing a gallium oxide substrate that enables the gallium oxide substrate to be cut vertically and horizontally in a lattice shape. Mechanical scribing processing in which a cut groove is engraved on a main plane by a scribing tool along a planned cutting line parallel to an X direction, which is defined as a direction parallel to an intersection line between the main plane and a plane (100), is performed using a gallium oxide substrate of which the main plane is the plane (001), laser scribing processing to be altered by scanning with a laser beam along a planned cutting line parallel to the Y direction is performed, and cutting is performed by break along planned cutting lines in the X direction and the Y direction after the mechanical scribing processing and after the laser scribing processing. |
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Mechanical scribing processing in which a cut groove is engraved on a main plane by a scribing tool along a planned cutting line parallel to an X direction, which is defined as a direction parallel to an intersection line between the main plane and a plane (100), is performed using a gallium oxide substrate of which the main plane is the plane (001), laser scribing processing to be altered by scanning with a laser beam along a planned cutting line parallel to the Y direction is performed, and cutting is performed by break along planned cutting lines in the X direction and the Y direction after the mechanical scribing processing and after the laser scribing processing.</description><language>eng ; fre ; ger</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CLADDING OR PLATING BY SOLDERING OR WELDING ; CRYSTAL GROWTH ; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MACHINE TOOLS ; METAL-WORKING NOT OTHERWISE PROVIDED FOR ; METALLURGY ; PERFORMING OPERATIONS ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SOLDERING OR UNSOLDERING ; TRANSPORTING ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL ; WELDING ; WORKING BY LASER BEAM ; WORKING CEMENT, CLAY, OR STONE ; WORKING STONE OR STONE-LIKE MATERIALS</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231101&DB=EPODOC&CC=EP&NR=4269669A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231101&DB=EPODOC&CC=EP&NR=4269669A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TSUJIMOTO, Yuki</creatorcontrib><creatorcontrib>KITAICHI, Mitsuru</creatorcontrib><creatorcontrib>ASAI, Yoshiyuki</creatorcontrib><creatorcontrib>OKAMOTO, Hirokazu</creatorcontrib><title>METHOD FOR PROCESSING GALLIUM OXIDE SUBSTRATE</title><description>Provided is a practical method for processing a gallium oxide substrate that enables the gallium oxide substrate to be cut vertically and horizontally in a lattice shape. Mechanical scribing processing in which a cut groove is engraved on a main plane by a scribing tool along a planned cutting line parallel to an X direction, which is defined as a direction parallel to an intersection line between the main plane and a plane (100), is performed using a gallium oxide substrate of which the main plane is the plane (001), laser scribing processing to be altered by scanning with a laser beam along a planned cutting line parallel to the Y direction is performed, and cutting is performed by break along planned cutting lines in the X direction and the Y direction after the mechanical scribing processing and after the laser scribing processing.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>CLADDING OR PLATING BY SOLDERING OR WELDING</subject><subject>CRYSTAL GROWTH</subject><subject>CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MACHINE TOOLS</subject><subject>METAL-WORKING NOT OTHERWISE PROVIDED FOR</subject><subject>METALLURGY</subject><subject>PERFORMING OPERATIONS</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SOLDERING OR UNSOLDERING</subject><subject>TRANSPORTING</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><subject>WELDING</subject><subject>WORKING BY LASER BEAM</subject><subject>WORKING CEMENT, CLAY, OR STONE</subject><subject>WORKING STONE OR STONE-LIKE MATERIALS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZND1dQ3x8HdRcPMPUggI8nd2DQ729HNXcHf08fEM9VXwj_B0cVUIDnUKDglyDHHlYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxrgEmRmaWZmaWjobGRCgBAIeHJVY</recordid><startdate>20231101</startdate><enddate>20231101</enddate><creator>TSUJIMOTO, Yuki</creator><creator>KITAICHI, Mitsuru</creator><creator>ASAI, Yoshiyuki</creator><creator>OKAMOTO, Hirokazu</creator><scope>EVB</scope></search><sort><creationdate>20231101</creationdate><title>METHOD FOR PROCESSING GALLIUM OXIDE SUBSTRATE</title><author>TSUJIMOTO, Yuki ; 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Mechanical scribing processing in which a cut groove is engraved on a main plane by a scribing tool along a planned cutting line parallel to an X direction, which is defined as a direction parallel to an intersection line between the main plane and a plane (100), is performed using a gallium oxide substrate of which the main plane is the plane (001), laser scribing processing to be altered by scanning with a laser beam along a planned cutting line parallel to the Y direction is performed, and cutting is performed by break along planned cutting lines in the X direction and the Y direction after the mechanical scribing processing and after the laser scribing processing.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng ; fre ; ger |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CLADDING OR PLATING BY SOLDERING OR WELDING CRYSTAL GROWTH CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR METALLURGY PERFORMING OPERATIONS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SOLDERING OR UNSOLDERING TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL WELDING WORKING BY LASER BEAM WORKING CEMENT, CLAY, OR STONE WORKING STONE OR STONE-LIKE MATERIALS |
| title | METHOD FOR PROCESSING GALLIUM OXIDE SUBSTRATE |
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