METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT, SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT, SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR DEVICE

A manufacturing method for a semiconductor element includes forming a mask (21) on a front surface (11a) of a substrate (11), the mask having an opening to expose the front surface, growing a GaN layer (32), which is a first semiconductor layer by epitaxially growing a semiconductor along the mask (...

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Bibliographische Detailangaben
Hauptverfasser: FUJITA, Kokichi, SAWADA, Tatsuro, KASAI, Hayao, HIRAYAMA, Tomohisa, MASAKI, Katsuaki, HAYASHI, Yuichiro, AZUMA, Katsunori
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A manufacturing method for a semiconductor element includes forming a mask (21) on a front surface (11a) of a substrate (11), the mask having an opening to expose the front surface, growing a GaN layer (32), which is a first semiconductor layer by epitaxially growing a semiconductor along the mask (21), starting from the front surface (11a) exposed through the opening (22), and growing a GaN layer (33), which is a second semiconductor layer. On a surface (33a) located opposite to the substrate 11 in a layering direction and on which a Schottky electrode (41) is provided, a width (w2) from an end portion of the surface (33a) to the Schottky electrode (41) is smaller than a width (w1) of the mask (21).