MATERIAL COMPRISING A STACK WITH A THIN ZINC-BASED DIELECTRIC OXIDE UNDERLAYER AND METHOD FOR DEPOSITING SAID MATERIAL

The invention relates to a material including a substrate (30) coated on one face (29) with a stack of thin films (14) comprising at least one metal functional layer (140) and further comprising: - an oxide underlayer based on zinc, ZnO (129), between 0.3 and 4.4 nm; - a mixed oxide dielectric under...

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Bibliographische Detailangaben
Hauptverfasser: GUIMARD, Denis, ORVEN, Matthieu, BARRES, Thomas
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:The invention relates to a material including a substrate (30) coated on one face (29) with a stack of thin films (14) comprising at least one metal functional layer (140) and further comprising: - an oxide underlayer based on zinc, ZnO (129), between 0.3 and 4.4 nm; - a mixed oxide dielectric underlayer based on zinc and tin, SniZnjO (128), between 3.0 and 50.0 nm; - a nitride dielectric underlayer based on silicon-zirconium, SixNyZrZ (127), under and in contact with said zinc-based oxide underlayer, ZnO (129), between 5.0 and 50.0 nm; and - a nitride dielectric underlayer based on silicon, Si3N4 (127) or silicon-zirconium, SixNyZrZ, between 5.0 and 50.0 nm.