HYBRID STRUCTURE FOR ULTRA-WIDEBANDTERAHERTZ GENERATION AND RECEPTION WITH SEMICONDUCTOR DEVICES

An ultra-wideband hybrid structure (100) for transmitting high-frequency electrical signals, the structure comprising a substrate (110), a high-speed semiconductor substrate (105) connected to the substrate (110) of the ultra-wideband structure (100), a conductive interface (115) established between the substrate (110) and the high-speed semiconductor substrate (105), an ultrahigh speed device defining a first access port (P1) and established on the high-speed semiconductor substrate (105), a dielectric waveguide structure (DRW) defining a second access port (P2), the structure (DRW) established on the substrate (110) and on the high-speed semiconductor substrate (105), the structure (DRW) comprises a tapered end connectable to the first access port (P1) of the ultrahigh speed device, a metal waveguide structure (TSA) providing a low-pass characteristic interconnection, the structure (TSA) established on the substrate (110) and on the high-speed semiconductor substrate (105), wherein the metal waveguide structure (TSA) comprises a metal waveguide pattern defining a tapered coupler connected to the access port (P1) of the high-speed circuit or component.