SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE

In an embodiment, a semiconductor device is provided that comprises a vertical power FET (15, 16) for switching a load current, the power FET having a channel region formed by charge carriers of a first conductivity type and a first lateral FET (17) and a second lateral FET (18) providing an output...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HE, Honghai, HENSON, Timothy, HAASE, Robert, MIRCHANDANI, Ashita, NAIK, Harsh
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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