SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE

In an embodiment, a semiconductor device is provided that comprises a vertical power FET (15, 16) for switching a load current, the power FET having a channel region formed by charge carriers of a first conductivity type and a first lateral FET (17) and a second lateral FET (18) providing an output stage (19) of gate driver circuitry (10) for driving the power FET, wherein the first lateral FET has a channel region formed by charge carriers of the first conductivity type and the second lateral FET has a channel region formed by charge carriers of a second conductivity type opposing the first conductivity type. The power FET and the first and second lateral FETs are monolithically integrated into a semiconductor substrate of the first conductivity type that comprises a first surface and a drain of the first lateral FET and a source of the second lateral FET are electrically coupled to a gate of the power FET.