SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE

In an embodiment, a semiconductor device is provided that comprises a vertical power FET (15, 16) for switching a load current, the power FET having a channel region formed by charge carriers of a first conductivity type and a first lateral FET (17) and a second lateral FET (18) providing an output...

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Hauptverfasser: HE, Honghai, HENSON, Timothy, HAASE, Robert, MIRCHANDANI, Ashita, NAIK, Harsh
Format: Patent
Sprache:eng ; fre ; ger
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator HE, Honghai
HENSON, Timothy
HAASE, Robert
MIRCHANDANI, Ashita
NAIK, Harsh
description In an embodiment, a semiconductor device is provided that comprises a vertical power FET (15, 16) for switching a load current, the power FET having a channel region formed by charge carriers of a first conductivity type and a first lateral FET (17) and a second lateral FET (18) providing an output stage (19) of gate driver circuitry (10) for driving the power FET, wherein the first lateral FET has a channel region formed by charge carriers of the first conductivity type and the second lateral FET has a channel region formed by charge carriers of a second conductivity type opposing the first conductivity type. The power FET and the first and second lateral FETs are monolithically integrated into a semiconductor substrate of the first conductivity type that comprises a first surface and a drain of the first lateral FET and a source of the second lateral FET are electrically coupled to a gate of the power FET.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
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