SEMICONDUCTOR ELECTRONIC DEVICES INCLUDING SIDEWALL BARRIER LAYERS AND METHODS OF FABRICATING THE SAME

The present disclosure includes a semiconductor device comprising a substrate including a device surface and a patterned metallic electrode disposed on the substrate. The patterned metallic electrode is formed of one or more of copper, gold, and silver. The patterned metallic electrode comprises a lower surface proximate to the substrate, an upper surface, and a sidewall extending between the lower surface and the upper surface a sidewall barrier layer extending over the sidewall. The sidewall barrier layer may be a manganese oxide barrier layer.