SEMICONDUCTOR FIELD-EFFECT TRANSISTOR, POWER AMPLIFIER COMPRISING THE SAME AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR FIELD-EFFECT TRANSISTOR, POWER AMPLIFIER COMPRISING THE SAME AND MANUFACTURING METHOD THEREOF

A semiconductor field-effect transistor contains an n-type doped layer (234) arranged close to the edge of the two-dimensional electron gas area (232G) in a channel layer (231); said n-type doped layer is arranged to adjust the distribution of electron concentration in the transistor, and to improve...

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Bibliographische Detailangaben
1. Verfasser: WU, Chan-Shin
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A semiconductor field-effect transistor contains an n-type doped layer (234) arranged close to the edge of the two-dimensional electron gas area (232G) in a channel layer (231); said n-type doped layer is arranged to adjust the distribution of electron concentration in the transistor, and to improve the RF linearity of the overall component; thereby not only the threshold voltage can be controlled through the adjustment of the charge, but the contact and series resistance can also be reduced.