MANUFACTURING METHOD FOR COMPLEX AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

The problem to be overcome by the present disclosure is to provide a method for manufacturing a composite structure, including a base member, a bonding layer, and an element to be bonded, by sintering a metal paste between the base member and the element to be bonded and thereby forming the bonding layer between them, while increasing the efficiency of forming the bonding layer and reducing the chances of creating voids in the bonding layer. The manufacturing method includes: an application step including providing a bonding material on the base member by applying the metal paste onto the base member; a preheating step including heating the bonding material before the element to be bonded is stacked on the bonding material and thereby drying the bonding material until a percentage of an organic component in the bonding material becomes equal to or greater than 3% by mass and equal to or less than 8% by mass with respect to the bonding material; a mounting step including stacking the element to be bonded onto the bonding material and heating the bonding material to form a multi-layer stack; and a sintering step including sintering the bonding material by heating the multi-layer stack in a heating furnace and thereby forming the bonding layer.