PROCESS FOR PRODUCING ROLLS AND MEMBRANES OF SUBMICROMETRIC THICKNESS OF GA2O3 BY ION IMPLANTATION

PROCESS FOR PRODUCING ROLLS AND MEMBRANES OF SUBMICROMETRIC THICKNESS OF GA2O3 BY ION IMPLANTATION

The present invention relates to a process for the production of membranes of submicrometric thickness and rolls of Ga2O3 comprising the steps of: a) implanting ions in a monocrystal semiconductor of Ga2O3, with a cleavage plane parallel to the surface, at a temperature below 500°C, making an ion be...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: JORGE DA COSTA ALVES, Eduardo, MANUEL VARELAS DA ROCHA, Jorge, LORENZ, Katharina, ANTÓNIO BAPTISTA PERES, Marco
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:The present invention relates to a process for the production of membranes of submicrometric thickness and rolls of Ga2O3 comprising the steps of: a) implanting ions in a monocrystal semiconductor of Ga2O3, with a cleavage plane parallel to the surface, at a temperature below 500°C, making an ion beam to strike, along a non-parallel direction to the referred cleavage plane, with an energy in the range of 10-4000 keV, a flux in the range of 1×1012-1×1014 ions/cm2.s and a fluence in the range of 1×1013-1×1016 ions/cm2, forming at least one roll; b) subjecting the at least one roll formed in step a) to a thermal treatment at a temperature equal to or greater than 500°C.