ETCHING AGENT AND METHOD FOR PRODUCING CIRCUIT BOARD

The present invention includes an etching agent that selectively etches a copper layer of a processing target in which a noble metal layer containing a metal nobler than copper and the copper layer coexist, the etching agent including: a copper ion; one or more nitrogen-containing compounds selected...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	FUKUI Yu, NAKANE Dai, AKIYAMA Daisaku, NISHIE Kenji
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PRINTED CIRCUITS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present invention includes an etching agent that selectively etches a copper layer of a processing target in which a noble metal layer containing a metal nobler than copper and the copper layer coexist, the etching agent including: a copper ion; one or more nitrogen-containing compounds selected from the group consisting of a heterocyclic compound having two or more nitrogen atoms in a ring and an amino group-containing compound having 8 or less carbon atoms; a polyalkylene glycol; and a halogen ion, in which the polyalkylene glycol is contained in an amount of 0.0005% by weight or more and 7% by weight or less, and the halogen ion is contained in an amount of 1 ppm or more and 250 ppm or less.