RTP SUBSTRATE TEMPERATURE ONE FOR ALL CONTROL ALGORITHM
Embodiments disclosed herein include a method of processing a substrate. In an embodiment, the method comprises detecting one or more substrate parameters of a substrate in a processing chamber, and heating the substrate to a first temperature with an open loop tuning (OLT) heating process based on...
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| creator | ADERHOLD, Wolfgang WANG, Yi |
| description | Embodiments disclosed herein include a method of processing a substrate. In an embodiment, the method comprises detecting one or more substrate parameters of a substrate in a processing chamber, and heating the substrate to a first temperature with an open loop tuning (OLT) heating process based on the one or more substrate parameters. In an embodiment, the method may further comprise placing the substrate on an edge ring, and heating the substrate to a second temperature with a low temperature closed loop controller. In an embodiment, the method further comprises heating the substrate to a third temperature with a high temperature closed loop controller. |
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In an embodiment, the method comprises detecting one or more substrate parameters of a substrate in a processing chamber, and heating the substrate to a first temperature with an open loop tuning (OLT) heating process based on the one or more substrate parameters. In an embodiment, the method may further comprise placing the substrate on an edge ring, and heating the substrate to a second temperature with a low temperature closed loop controller. In an embodiment, the method further comprises heating the substrate to a third temperature with a high temperature closed loop controller.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; BLASTING ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FURNACES ; FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL ; HEATING ; KILNS ; LIGHTING ; MECHANICAL ENGINEERING ; OPEN SINTERING OR LIKE APPARATUS ; OVENS ; RETORTS ; SEMICONDUCTOR DEVICES ; WEAPONS</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20241211&DB=EPODOC&CC=EP&NR=4241297A4$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20241211&DB=EPODOC&CC=EP&NR=4241297A4$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ADERHOLD, Wolfgang</creatorcontrib><creatorcontrib>WANG, Yi</creatorcontrib><title>RTP SUBSTRATE TEMPERATURE ONE FOR ALL CONTROL ALGORITHM</title><description>Embodiments disclosed herein include a method of processing a substrate. In an embodiment, the method comprises detecting one or more substrate parameters of a substrate in a processing chamber, and heating the substrate to a first temperature with an open loop tuning (OLT) heating process based on the one or more substrate parameters. In an embodiment, the method may further comprise placing the substrate on an edge ring, and heating the substrate to a second temperature with a low temperature closed loop controller. In an embodiment, the method further comprises heating the substrate to a third temperature with a high temperature closed loop controller.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>BLASTING</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FURNACES</subject><subject>FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL</subject><subject>HEATING</subject><subject>KILNS</subject><subject>LIGHTING</subject><subject>MECHANICAL ENGINEERING</subject><subject>OPEN SINTERING OR LIKE APPARATUS</subject><subject>OVENS</subject><subject>RETORTS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>WEAPONS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAPCglQCA51Cg4JcgxxVQhx9Q1wBbJCg1wV_P1cFdz8gxQcfXwUnP39QoL8fYBsd_8gzxAPXx4G1rTEnOJUXijNzaDg5hri7KGbWpAfn1pckJicmpdaEu8aYGJkYmhkae5oYkyEEgAMrigR</recordid><startdate>20241211</startdate><enddate>20241211</enddate><creator>ADERHOLD, Wolfgang</creator><creator>WANG, Yi</creator><scope>EVB</scope></search><sort><creationdate>20241211</creationdate><title>RTP SUBSTRATE TEMPERATURE ONE FOR ALL CONTROL ALGORITHM</title><author>ADERHOLD, Wolfgang ; WANG, Yi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP4241297A43</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>BLASTING</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FURNACES</topic><topic>FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL</topic><topic>HEATING</topic><topic>KILNS</topic><topic>LIGHTING</topic><topic>MECHANICAL ENGINEERING</topic><topic>OPEN SINTERING OR LIKE APPARATUS</topic><topic>OVENS</topic><topic>RETORTS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>WEAPONS</topic><toplevel>online_resources</toplevel><creatorcontrib>ADERHOLD, Wolfgang</creatorcontrib><creatorcontrib>WANG, Yi</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ADERHOLD, Wolfgang</au><au>WANG, Yi</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>RTP SUBSTRATE TEMPERATURE ONE FOR ALL CONTROL ALGORITHM</title><date>2024-12-11</date><risdate>2024</risdate><abstract>Embodiments disclosed herein include a method of processing a substrate. In an embodiment, the method comprises detecting one or more substrate parameters of a substrate in a processing chamber, and heating the substrate to a first temperature with an open loop tuning (OLT) heating process based on the one or more substrate parameters. In an embodiment, the method may further comprise placing the substrate on an edge ring, and heating the substrate to a second temperature with a low temperature closed loop controller. In an embodiment, the method further comprises heating the substrate to a third temperature with a high temperature closed loop controller.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng ; fre ; ger |
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| subjects | BASIC ELECTRIC ELEMENTS BLASTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FURNACES FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL HEATING KILNS LIGHTING MECHANICAL ENGINEERING OPEN SINTERING OR LIKE APPARATUS OVENS RETORTS SEMICONDUCTOR DEVICES WEAPONS |
| title | RTP SUBSTRATE TEMPERATURE ONE FOR ALL CONTROL ALGORITHM |
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