RTP SUBSTRATE TEMPERATURE ONE FOR ALL CONTROL ALGORITHM

Embodiments disclosed herein include a method of processing a substrate. In an embodiment, the method comprises detecting one or more substrate parameters of a substrate in a processing chamber, and heating the substrate to a first temperature with an open loop tuning (OLT) heating process based on...

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Bibliographische Detailangaben
Hauptverfasser:	ADERHOLD, Wolfgang, WANG, Yi
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS BLASTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FURNACES FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL HEATING KILNS LIGHTING MECHANICAL ENGINEERING OPEN SINTERING OR LIKE APPARATUS OVENS RETORTS SEMICONDUCTOR DEVICES WEAPONS
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Beschreibung
Zusammenfassung:	Embodiments disclosed herein include a method of processing a substrate. In an embodiment, the method comprises detecting one or more substrate parameters of a substrate in a processing chamber, and heating the substrate to a first temperature with an open loop tuning (OLT) heating process based on the one or more substrate parameters. In an embodiment, the method may further comprise placing the substrate on an edge ring, and heating the substrate to a second temperature with a low temperature closed loop controller. In an embodiment, the method further comprises heating the substrate to a third temperature with a high temperature closed loop controller.