FIELD EFFECT TRANSISTOR WITH AT LEAST PARTIALLY RECESSED FIELD PLATE

FIELD EFFECT TRANSISTOR WITH AT LEAST PARTIALLY RECESSED FIELD PLATE

A transistor device includes a semiconductor layer, a surface dielectric layer on the semiconductor layer, and at least a portion of a gate on the surface dielectric layer. The surface dielectric layer includes an aperture therein that is laterally spaced apart from the gate. The transistor device i...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: GUO, Jia, SHEPPARD, Scott, BOTHE, Kyle, RADULESCU, Fabian, ALCORN, Terry
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A transistor device includes a semiconductor layer, a surface dielectric layer on the semiconductor layer, and at least a portion of a gate on the surface dielectric layer. The surface dielectric layer includes an aperture therein that is laterally spaced apart from the gate. The transistor device includes an interlayer dielectric layer on the surface dielectric layer, and a field plate on the interlayer dielectric layer. The field plate is laterally spaced apart from the gate, and at least a portion of the field plate includes a recessed portion above the aperture in the surface dielectric layer.