BONDING SYSTEM AND BONDING COMPENSATION METHOD

Embodiments of the present disclosure provide a bonding system and a bonding compensation method. The bonding compensation method includes the following operations. A first deviation value between a current position of a picked first die and a first target position is determined. A second deviation value between a current position of a second die on a wafer and a second target position is determined. The wafer is moved according to the first deviation value and the second deviation value, to align the first die with the second die. The first die is bonded to the second die, after aligning the first die with the second die. A third deviation value between positions of the first die and the second die which have been bonded is determined. Calibration parameters for a to-be-bonded third die and a fourth die on the wafer are determined according to the third deviation value. The third die is bonded to the fourth die, according to the calibration parameters.