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A component for a film formation apparatus or an etching apparatus used for manufacturing semiconductors, the component including a disk-shaped or ring-shaped SiC film having an outer diameter of 300 mm or more and a thickness of 3 mm or more. The component does not include an interface extending pe...

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Bibliographische Detailangaben
Hauptverfasser:	KAWAHARA, Koji, OGAWA, Tomonori
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A component for a film formation apparatus or an etching apparatus used for manufacturing semiconductors, the component including a disk-shaped or ring-shaped SiC film having an outer diameter of 300 mm or more and a thickness of 3 mm or more. The component does not include an interface extending perpendicularly to a thickness direction of the SiC film on an exposed side surface of the SiC film.