METHODS FOR DEPOSITING PIEZOELECTRIC MATERIALS, AND MATERIALS DEPOSITED THEREWITH

Methods of depositing material onto substrate comprising: depositing a first seed material onto a wafer substrate, the wafer substrate having a face that defines a normal to the substrate, wherein the first seed material is deposited at a pressure of 10 to 20 mTorr to form a pre-seed layer on the wa...

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Bibliographische Detailangaben
Hauptverfasser:	BELSICK, John, WASILIK, Matthew, DIEP, Buu Quoc, DENIZ, Derya
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRONIC CIRCUITRY ELECTRICITY IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS RESONATORS
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Beschreibung
Zusammenfassung:	Methods of depositing material onto substrate comprising: depositing a first seed material onto a wafer substrate, the wafer substrate having a face that defines a normal to the substrate, wherein the first seed material is deposited at a pressure of 10 to 20 mTorr to form a pre-seed layer on the wafer substrate, wherein the pre-seed layer has a surface roughness from 1 to 10 nm; depositing a second seed material onto at least a portion of the pre-seed layer at an off-normal incidence angle to form a seed layer on at least a portion of the pre-seed layer; and depositing a bulk piezoelectric material onto at least a portion of the seed layer to form a bulk piezoelectric layer having a c-axis tilt of 35 degrees or greater and a surface roughness of 4.5 nm or less. Structures and bulk acoustic wave resonators containing same are also included.