SEMICONDUCTOR DEVICE

According to one embodiment, a semiconductor device (100) includes first and second electrodes (41, 42), first to third semiconductor regions (1 to 3), a conductive body (10), and a gate electrode (30). The first semiconductor region is located on the first electrode and electrically connected with the first electrode. The second semiconductor region is located on the first semiconductor region. The third semiconductor region is located on a portion of the second semiconductor region. The conductive body is located in the first semiconductor region with an insulating part (21) interposed. A lower surface of the conductive body includes first and second surfaces (S1, S2). The gate electrode is located in the insulating part. The gate electrode faces the second semiconductor region via a gate insulating layer (31). The second electrode is located on the second and third semiconductor regions. The second electrode is electrically connected with the second and third semiconductor regions.