GAAS WAFER AND METHOD FOR PRODUCING GAAS INGOT

Provided is a GaAs wafer that can suitably be used to produce LiDAR sensors in particular and a method of producing a GaAs ingot that can be used to obtain such a GaAs wafer. The GaAs wafer has a silicon concentration of 5.0 × 1017 cm-3 or more and less than 3.5 × 1018 cm-3, an indium concentration...

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Bibliographische Detailangaben
Hauptverfasser:	AKAISHI, Akira, SUNACHI, Naoya, TOBA, Ryuichi
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	Provided is a GaAs wafer that can suitably be used to produce LiDAR sensors in particular and a method of producing a GaAs ingot that can be used to obtain such a GaAs wafer. The GaAs wafer has a silicon concentration of 5.0 × 1017 cm-3 or more and less than 3.5 × 1018 cm-3, an indium concentration of 3.0 × 1017 cm-3 or more and less than 3.0 × 1019 cm-3, and a boron concentration of 1.0 × 1018 cm-3 or more. The average dislocation density of the GaAs wafer is 1500/cm2 or less.