A LATERAL SURFACE GATE VERTICAL FIELD EFFECT TRANSISTOR WITH ADJUSTABLE OUTPUT CAPACITANCE

A LATERAL SURFACE GATE VERTICAL FIELD EFFECT TRANSISTOR WITH ADJUSTABLE OUTPUT CAPACITANCE

A lateral surface gate vertical field effect transistor with adjustable output capacitance is described herein. The lateral surface gate vertical field effect transistor includes both a lateral gate and a trench gate. The lateral gate modulates a surface channel and the trench gate includes a contro...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: GEORGESCU, Sorin S, YANG, Kuo-Chang Robert
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PULSE TECHNIQUE
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A lateral surface gate vertical field effect transistor with adjustable output capacitance is described herein. The lateral surface gate vertical field effect transistor includes both a lateral gate and a trench gate. The lateral gate modulates a surface channel and the trench gate includes a controllable depth. The controllable depth may be varied to advantageously adjust output capacitance.