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A method includes disposing a first direct bonded metal (DBM) substrate substantially parallel to a second DBM substrate a distance apart to enclose a space. The method further includes disposing at least a semiconductor die in the space, and bonding the semiconductor die to the first DBM substrate...

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Bibliographische Detailangaben
Hauptverfasser: Inpil, YOO, IM, Seungwon, EOM, Jooyang, Oseob, JEON
Format: Patent
Sprache:eng ; fre ; ger
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Beschreibung
Zusammenfassung:A method includes disposing a first direct bonded metal (DBM) substrate substantially parallel to a second DBM substrate a distance apart to enclose a space. The method further includes disposing at least a semiconductor die in the space, and bonding the semiconductor die to the first DBM substrate using a first adhesive layer without an intervening spacer block between the semiconductor die and the first DBM substrate, and bonding the semiconductor die to the second DBM substrate using a second adhesive without an intervening spacer block between the semiconductor die and the second DBM substrate.