SOLID-STATE IMPEDANCE MATCHING SYSTEMS INCLUDING A HYBRID TUNING NETWORK WITH A SWITCHABLE COARSE TUNING NETWORK AND A VARACTOR FINE TUNING NETWORK

An impedance matching network (104, 304, 1004) is disclosed for providing an impedance match between a RF generator (102, 202, 302, 1002) and a load (106) such as a plasma chamber (306), the impedance matching network comprising: a first electronic variable capacitance comprising: an input terminal...

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Bibliographische Detailangaben
Hauptverfasser:	LINCOLN, Daniel J, COUMOU, David J, OLDZIEJ, Mariusz, CHAWLA, Yogendra K, RADOMSKI, Aaron T, BROWN, Dennis M
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AMPLIFIERS BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS RESONATORS
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Beschreibung
Zusammenfassung:	An impedance matching network (104, 304, 1004) is disclosed for providing an impedance match between a RF generator (102, 202, 302, 1002) and a load (106) such as a plasma chamber (306), the impedance matching network comprising: a first electronic variable capacitance comprising: an input terminal (505) for receiving a first radio frequency (RF) input signal (RFIN) from the RF generator (102, 202); a coarse tuning network (50, 502) comprising a switchable circuit configured to (i) receive the first radio RF input signal (RFIN), (ii) output a first RF output signal (RFOUT) to a reference terminal (506) or to the load (106), and (iii) receive a first direct current (DC) bias voltage (VBIAS - Fig. 3), wherein the switchable circuit is configured to be switched between a first state and a second state, and wherein a capacitance of the switchable circuit is based on the first DC bias voltage (VBIAS - Fig. 3) while in the first state and is not based on the first DC bias voltage (VBIAS - Fig. 3) while in the second state; and a fine tuning network (400, 504) connected in parallel with the coarse tuning network (50, 502), the fine tuning network (400, 504) comprising a back-to-back diode varactor (400), wherein the back-to-back diode varactor (400) is configured to receive a second DC bias voltage (VBIAS - Fig. 8a, 8b) and includes: a first diode (D2) configured to receive the first RF input signal (RFIN), and a second diode connected (D1) in a back-to-back configuration with the first diode (D2) and configured to output a second RF output signal to the reference terminal (506) or to the load (106), wherein a capacitance of the back-to-back diode varactor (400) is based on the second DC bias voltage (VBIAS - Fig. 8a, 8b); and a transformer (602, 622) connected to the input terminal (505) and between the first electronic variable capacitance and the plasma chamber, wherein the transformer (602, 622) converts a RF input signal received from the RF generator (102, 202) to the first RF input signal (RFIN).