METHOD FOR MANUFACTURING A PASSIVE-CONTACT PHOTOVOLTAIC CELL

Said method comprises the successive steps of: a) providing a structure comprising: - a substrate (1) based on crystalline silicon, having a first surface (10) and a second, opposite surface (11), each comprising a polished zone (ZP) and a textured zone (ZT); - first and second tunnel oxide films (2a, 2b), formed respectively on the polished zone (ZP) of the first and second surfaces (10, 11); - first and second layers of polysilicon (3a, 3b), formed respectively on the first and second tunnel oxide films (2a, 2b); - first and second dielectric layers (4a, 4b), comprising respectively p- and n-type dopants, formed on the textured zones (ZT) and respectively on the first and second layers of polysilicon (3a, 3b); b) applying a heat treatment in order to diffuse the p- and n-type dopants respectively under the first and second surfaces (10, 11); c) contacting each of the layers of polysilicon (3a, 3b) with an electrode (E).