DEVICE, SYSTEM AND METHOD FOR PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION

A device for plasma-enhanced chemical vapor deposition includes a process chamber configured to receive at least one workpiece carrier. The device is configured to heat the process chamber with the aid of at least one workpiece carrier that can be received by the process chamber. A system and a meth...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	FUCHS, Jens-Uwe, TRÖLLER, Mirko, LEICHTLE, Roland, REIZE, Ralf
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A device for plasma-enhanced chemical vapor deposition includes a process chamber configured to receive at least one workpiece carrier. The device is configured to heat the process chamber with the aid of at least one workpiece carrier that can be received by the process chamber. A system and a method for plasma-enhanced chemical vapor deposition are also provided.