SEMICONDUCTOR DEVICE WITH AN INSULATING REGION FORMED BETWEEN A CONTROL ELECTRODE AND A CONDUCTIVE ELEMENT AND METHOD OF FABRICATION THEREFOR

A semiconductor device includes a semiconductor substrate (110), a first dielectric layer (130), a first current-carrying electrode (140), and a second current-carrying electrode (145) formed over the semiconductor substrate. A control electrode (150) is formed over the semiconductor substrate and d...

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Bibliographische Detailangaben
Hauptverfasser:	Green, Bruce, McRae, Grote, Bernhard, Khalil, Ibrahim
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A semiconductor device includes a semiconductor substrate (110), a first dielectric layer (130), a first current-carrying electrode (140), and a second current-carrying electrode (145) formed over the semiconductor substrate. A control electrode (150) is formed over the semiconductor substrate and disposed between the first current-carrying electrode and the second current-carrying electrode. A conductive element (180) formed over the first dielectric layer, adjacent the control electrode, and between the control electrode and the second current-carrying electrode, includes a first region (182) formed a first distance (183) from the upper surface of the semiconductor substrate and a second region (186) formed a second distance (187) from the upper surface of the semiconductor substrate. An insulating region (160) is formed between the control electrode and the conductive element.