METHOD FOR FORMING A LIFT-OFF MASK STRUCTURE

A method for forming a lift-off mask structure (1) comprises providing a substrate body (10), depositing a layer (11) of bottom anti-reflective coating, BARC, over a surface of the substrate body (10), and depositing a layer (12) of photosensitive resist over the BARC layer (11). The method further...

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Bibliographische Detailangaben
Hauptverfasser:	EILMSTEINER, Gerhard, PERTL, Patrik
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A method for forming a lift-off mask structure (1) comprises providing a substrate body (10), depositing a layer (11) of bottom anti-reflective coating, BARC, over a surface of the substrate body (10), and depositing a layer (12) of photosensitive resist over the BARC layer (11). The method further comprises exposing the resist layer (12) to electromagnetic radiation (21) through a photomask (20), and forming the lift-off mask structure (1) by applying a developer for selectively removing a portion of the BARC layer (11) and of the resist layer (12) such that an underlying portion of the surface of the substrate body (10) is exposed.