SUBSTRATE AND POWER AMPLIFICATION DEVICE

Embodiments of this application provide a substrate and a power amplification component, and relate to the field of semiconductor technologies, so that a new composite substrate is implemented, dependence of a transistor on a silicon carbide semiconductor substrate is reduced, and costs are effectiv...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	HU, Bin, DUAN, Huantao
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	Embodiments of this application provide a substrate and a power amplification component, and relate to the field of semiconductor technologies, so that a new composite substrate is implemented, dependence of a transistor on a silicon carbide semiconductor substrate is reduced, and costs are effectively controlled. The substrate is used in a transistor, and an epitaxial structure of the transistor is generated on the substrate. The substrate includes a base and a first epitaxial layer formed on the base. The first epitaxial layer is a semiconductor, the base and the first epitaxial layer include a SiC material, and the first epitaxial layer is doped with transition metal.