JOINED BODY, CIRCUIT BOARD, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING JOINED BODY

This joined body according to an embodiment is characterized by comprising: a ceramic substrate; a copper plate; and a joining layer disposed on at least one surface of the ceramic substrate to join the ceramic substrate and the copper plate together. The joined body is further characterized in that...

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Bibliographische Detailangaben
Hauptverfasser:	SUENAGA, Seiichi, FUJISAWA, Sachiko, YONETSU, Maki
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CEMENTS CERAMICS CHEMISTRY CLADDING OR PLATING BY SOLDERING OR WELDING COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY LIME, MAGNESIA MACHINE TOOLS MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS METAL-WORKING NOT OTHERWISE PROVIDED FOR METALLURGY PERFORMING OPERATIONS PRINTED CIRCUITS REFRACTORIES SEMICONDUCTOR DEVICES SLAG SOLDERING OR UNSOLDERING TRANSPORTING TREATMENT OF NATURAL STONE WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	This joined body according to an embodiment is characterized by comprising: a ceramic substrate; a copper plate; and a joining layer disposed on at least one surface of the ceramic substrate to join the ceramic substrate and the copper plate together. The joined body is further characterized in that: the joining layer contains Ag, Cu, Ti, and a first element which is one or two selected from Sn and In; a Ti alloy is present at the junction interface between the copper plate and the joining layer; the Ti alloy comprises Ti and at least one selected from Ag, Cu, Sn and In; and the abundance ratio of the Ti alloy per 30 µm of the length of the junction interface is 30%.