METHOD OF FORMING AN INTERCONNECT METALLISATION BY PANEL LEVEL PACKAGING AND THE CORRESPONDING DEVICE

A method of packaging a semiconductor die, the method comprising the steps of providing a semiconductor die (13) onto a substrate , wherein said substrate comprises a carrier layer (11) with a release tape (15) situated thereon, wherein a bottom side of said semiconductor die (13) is placed on said thermal release tape (15), such that placement of said semiconductor die (15) forms a first raised surface and a second surface; application of a photoresist layer (21) on both said semiconductor die (13) as well as said thermal release tape (15); formation of openings (27, 29) in said photoresist layer (21) so as to expose said semiconductor die (13) above said first surface and to partially expose, adjacent to said semiconductor die (13), said thermal release tape (15) above said second surface; formation of a metallization layer (5,31) such that said metallization layer (5,31) contacts said exposed semiconductor die (13) above said first surface and said partially exposed thermal release tape (15) adjacent to said semiconductor die (13); encapsulating said semiconductor die (13) as well as said thermal release tape (15) with an insulating layer (3); removal of said substrate (11) along with said thermal release tape (15) so as to reveal said metallization layer (5,31) adjacent to said semiconductor die (13), and said bottom side of said semiconductor die (13); and metallization (49) of said bottom side of said semiconductor die (13) to form said packaged semiconductor die. A corresponding device is also presented herein.