A SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURE

This disclosure relates to a semiconductor device comprising at least three regions, a first region, a second region, and a third region. The first region comprises a first layer and a second layer, wherein first layer and the second layer are positioned laterally along the first region, wherein the first layer and the second layer have opposite polarity. The second region comprises a third layer and a fourth layer, wherein third layer and the fourth layer are positioned laterally along the second region, wherein the third layer and the fourth layer have opposite polarity. The third region comprises a fifth layer and a sixth layer, wherein fifth layer and the sixth layer are positioned laterally along the third region, wherein the fifth layer and the sixth layer have opposite polarity. The first layer is positioned substantially across the third layer, the third layer is positioned substantially across the fifth layer, the second layer is positioned substantially across the fourth layer and the fourth layer is positioned substantially across the sixth layer.