POWER SEMICONDUCTOR MODULE, METHOD FOR ASSEMBLING A POWER SEMICONDUCTOR MODULE AND HOUSING FOR A POWER SEMICONDUCTOR MODULE
A power semiconductor module comprises at least one substrate comprising a dielectric insulation layer and a first metallization layer attached to the dielectric insulation layer, at least one semiconductor body mounted to the first metallization layer, a housing at least partly enclosing the substr...
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Format: | Patent |
Sprache: | eng ; fre ; ger |
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Zusammenfassung: | A power semiconductor module comprises at least one substrate comprising a dielectric insulation layer and a first metallization layer attached to the dielectric insulation layer, at least one semiconductor body mounted to the first metallization layer, a housing at least partly enclosing the substrate, the housing comprising sidewalls and a cover, the cover at least partly covering an opening formed by the sidewalls and comprising at least one flexible portion, and at least one press-on pin comprising a first end and a second end, wherein each press-on pin is arranged either on the substrate or on one of the at least one semiconductor body, wherein the first end of the press-on pin faces the substrate or semiconductor body, and extends from the substrate or the respective semiconductor body towards the cover such that its second end contacts one of the at least one flexible portion of the cover, the substrate in an area vertically below the press-on pin comprises a first spring constant k1 in a vertical direction that is perpendicular to a top surface of the substrate, the at least one flexible portion of the cover comprises a second spring constant k2, and 0.5∗k1 ≤ k2 ≤ 5∗k1. |
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