GATE DRIVING CIRCUIT FOR POWER SEMICONDUCTOR ELEMENT

Provided is a power semiconductor element gate driving circuit that performs ON/OFF control on main current of a power semiconductor element (1) having a gate electrode by charging the gate electrode of the power semiconductor element with electric charges or discharging the electric charges on the...

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1. Verfasser: SAKAI, Takuya
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:Provided is a power semiconductor element gate driving circuit that performs ON/OFF control on main current of a power semiconductor element (1) having a gate electrode by charging the gate electrode of the power semiconductor element with electric charges or discharging the electric charges on the basis of an inputted gate signal. When the gate signal is switched to an OFF signal, control is performed such that gate current for discharging the electric charges from the gate electrode increases in association with increase in a temperature of the power semiconductor element and decreases in association with increase in the main current.