SELF-BIASING IDEAL DIODE CIRCUIT
An ideal diode circuit is described which uses an NMOS transistor as a low-loss ideal diode. The control circuit for the transistor is referenced to the anode voltage and not to ground, so the control circuitry may be low voltage circuitry, even if the input voltage is very high, referenced to earth...
Gespeichert in:
Hauptverfasser: | , |
---|---|
Format: | Patent |
Sprache: | eng ; fre ; ger |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | An ideal diode circuit is described which uses an NMOS transistor as a low-loss ideal diode. The control circuit for the transistor is referenced to the anode voltage and not to ground, so the control circuitry may be low voltage circuitry, even if the input voltage is very high, referenced to earth ground. A capacitor is clamped to about 10-20V, referenced to the anode voltage. The clamped voltage powers a differential amplifier for the detecting if the anode voltage is greater than the cathode voltage. The capacitor is charged to the clamped voltage during normal operation of the ideal diode by controlling the conductivity of a second transistor coupled between the cathode and the capacitor, enabling the circuit to be used with a wide range of frequencies and voltages. All voltages applied to the differential amplifier are equal to or less than the clamped voltage. |
---|