INFRARED SENSOR AND INFRARED SENSOR MANUFACTURING METHOD

An infrared sensor (100) includes a first semiconductor substrate (1), a second semiconductor substrate (2), a sealing frame (3), and a first connection (4). The first semiconductor substrate (1) includes a first main surface (1a) and an infrared detection element (11). The second semiconductor subs...

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Bibliographische Detailangaben
Hauptverfasser:	FUJISAWA, Daisuke, TAKENAGA, Takashi
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PICTORIAL COMMUNICATION, e.g. TELEVISION SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	An infrared sensor (100) includes a first semiconductor substrate (1), a second semiconductor substrate (2), a sealing frame (3), and a first connection (4). The first semiconductor substrate (1) includes a first main surface (1a) and an infrared detection element (11). The second semiconductor substrate (2) includes a second main surface (2a) and a signal processing circuit (21). The sealing frame (3) surrounds an internal space (IS) with the first main surface (1a), the infrared detection element (11), and the second main surface (2a). The first connection (4) electrically connects the infrared detection element (11) and the signal processing circuit (21). The internal space (IS) is hermetically sealed by the first main surface (1a), the infrared detection element (11), the second main surface (2a), and the sealing frame (3). Each of the sealing frame (3) and the first connection (4) is sandwiched between the first main surface (1a) and the second main surface (2a).