SYNTHETIC SINGLE CRYSTAL DIAMOND AND METHOD FOR PRODUCING SAME

A synthetic single crystal diamond containing 100 ppm or more and 1500 ppm or less of nitrogen atoms, in which the synthetic single crystal diamond contains aggregates each composed of one vacancy and two to four nitrogen atoms present adjacent to the vacancy, a ratio b/a of a length b of a short di...

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Bibliographische Detailangaben
Hauptverfasser:	LEE, Jin Hwa, SUMIYA, Hitoshi, TERAMOTO, Minori
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMISTRY COMPOUNDS THEREOF CRYSTAL GROWTH INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH THEIR RELEVANT APPARATUS TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A synthetic single crystal diamond containing 100 ppm or more and 1500 ppm or less of nitrogen atoms, in which the synthetic single crystal diamond contains aggregates each composed of one vacancy and two to four nitrogen atoms present adjacent to the vacancy, a ratio b/a of a length b of a short diagonal line to a length a of a long diagonal line of diagonal lines of a Knoop indentation in a direction in a {001} plane of the synthetic single crystal diamond is 0.08 or less, and the Knoop indentation is formed by measuring Knoop hardness in the direction in the {001} plane of the synthetic single crystal diamond according to JIS Z 2251: 2009 under conditions of a temperature of 23°C±5°C and a test load of 4.9 N.