MATERIAL COMPRISING A STACK WITH A THIN ZINC-BASED OXIDE DIELECTRIC SUBLAYER AND METHOD FOR APPLYING SAID MATERIAL

The invention relates to a material comprising a substrate (30) coated on one face (29) with a stack of thin layers (14) comprising at least one metallic functional layer (140) and comprising: - a zinc oxide, ZnO, based sublayer (129) between 0.3 and 5.0 nm thick; - a silicon-zirconium nitride, SixN...

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Bibliographische Detailangaben
Hauptverfasser: GUIMARD, Denis, ORVEN, Matthieu, BARRES, Thomas
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:The invention relates to a material comprising a substrate (30) coated on one face (29) with a stack of thin layers (14) comprising at least one metallic functional layer (140) and comprising: - a zinc oxide, ZnO, based sublayer (129) between 0.3 and 5.0 nm thick; - a silicon-zirconium nitride, SixNyZrZ, based dielectric sublayer (127), underneath and in contact with the zinc oxide, ZnO, based sublayer (129), between 5.0 and 50.0 nm thick; - a silicon nitride Si3N4 based primary dielectric sublayer (125), underneath and in contact with the silicon-zirconium nitride, SixNyZrZ, based sublayer (127), between 5.0 and 30.0 nm thick; - and a titanium oxide, TiOx, based blocking layer (150) placed on and in contact with said functional layer (140).