DISPLAY PANEL AND ELECTRONIC DEVICE INCLUDING SAME

DISPLAY PANEL AND ELECTRONIC DEVICE INCLUDING SAME

A display panel (100) and an electronic device including the same are disclosed. A circuit layer (12) of the display panel (100) includes at least a first transistor (TFT1) and a second transistor (TFT2). The first transistor (TFT1) includes a first oxide semiconductor pattern (ACT1), a gate electro...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SON, Ki Min, HONG, Ye Won, NOH, Seok, PARK, Ki Bok
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
ADVERTISING
ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICESUSING STATIC MEANS TO PRESENT VARIABLE INFORMATION
BASIC ELECTRIC ELEMENTS
CRYPTOGRAPHY
DISPLAY
EDUCATION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PHYSICS
SEALS
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A display panel (100) and an electronic device including the same are disclosed. A circuit layer (12) of the display panel (100) includes at least a first transistor (TFT1) and a second transistor (TFT2). The first transistor (TFT1) includes a first oxide semiconductor pattern (ACT1), a gate electrode (GE1), a first electrode (DEI) in contact with one side of the first oxide semiconductor pattern (ACT1), a second electrode (SE1) in contact with the other side of the first oxide semiconductor pattern (ACT1), and a first-first metal pattern disposed on a substrate (10, SUBS) to overlap the first oxide semiconductor pattern (ACT1). The second transistor (TFT2) includes a second oxide semiconductor pattern (ACT2), a gate electrode (GE2), a first electrode (DE2) in contact with one side of the second oxide semiconductor pattern (ACT2), a second electrode (SE2) in contact with the other side of the second oxide semiconductor pattern (ACT2), a first-second metal pattern disposed on the substrate (10, SUBS) to overlap the second oxide semiconductor pattern (ACT2), and a second metal pattern disposed between the second oxide semiconductor pattern (ACT2) and the first-second metal pattern.