PELLICLE, ORIGINAL PLATE FOR LIGHT EXPOSURE, LIGHT EXPOSURE DEVICE, METHOD FOR PRODUCING PELLICLE, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

PELLICLE, ORIGINAL PLATE FOR LIGHT EXPOSURE, LIGHT EXPOSURE DEVICE, METHOD FOR PRODUCING PELLICLE, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

A pellicle including: a pellicle film including a carbon-based film having a carbon content rate of 40 mass% or more; a support frame that supports the pellicle film; and an adhesive layer containing an adhesive, the pellicle having the total amount of aqueous outgas of 5.0 × 10-4 Pa·L/sec or less i...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: OKUBO, Atsushi, ONO, Yousuke, KOHMURA, Kazuo
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
APPARATUS SPECIALLY ADAPTED THEREFOR
CHEMISTRY
CINEMATOGRAPHY
COMPOUNDS THEREOF
ELECTROGRAPHY
HOLOGRAPHY
INORGANIC CHEMISTRY
MATERIALS THEREFOR
METALLURGY
NON-METALLIC ELEMENTS
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Beschreibung
Zusammenfassung:A pellicle including: a pellicle film including a carbon-based film having a carbon content rate of 40 mass% or more; a support frame that supports the pellicle film; and an adhesive layer containing an adhesive, the pellicle having the total amount of aqueous outgas of 5.0 × 10-4 Pa·L/sec or less in an atmosphere of 23°C and 1 × 10-3 Pa or less.