PREPARATION METHOD FOR SEMICONDUCTOR STRUCTURE, AND SEMICONDUCTOR GROWTH DEVICE

The present application provides a method for a manufacturing semiconductor structure and a semiconductor growth device. The semiconductor growth device includes: a reaction chamber; a growth main pipe, where an end of the growth main pipe is connected to the reaction chamber; a vent main pipe; a first mixing main pipe to an Mth mixing main pipe, where M is an integer greater than or equal to 1; a first reaction gas source group to an Nth reaction gas source group, where N is an integer greater than or equal to 2; a first switching valve group to an Nth switching valve group, where a kth switching valve group is adapted for controlling transport of gas from a kth reaction gas source group to a jth mixing main pipe, k is an integer greater than or equal to 1 and less than or equal to N, and j is an integer greater than or equal to 1 and less than or equal to M; and a first growth vent switching valve to an Mth growth vent switching valve, where a jth growth vent switching valve is adapted for switching the gas in the jth mixing main pipe to be transported to the growth main pipe or the vent main pipe. The use of the semiconductor growth device helps to improve the steepness of an interface in a growth process of a semiconductor structure.