GAAS INGOT, METHOD FOR MANUFACTURING GAAS INGOT, AND GAAS WAFER

GAAS INGOT, METHOD FOR MANUFACTURING GAAS INGOT, AND GAAS WAFER

Provided is a GaAs ingot with which a GaAs wafer having a carrier concentration of 5.5 × 1017 cm-3 or less and low dislocation density with an average dislocation density of 500/cm2 or less can be obtained by adding a small amount of In with Si.A seed side end and a center portion of a straight body...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: AKAISHI, Akira, SUNACHI, Naoya, TOBA, Ryuichi
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:Provided is a GaAs ingot with which a GaAs wafer having a carrier concentration of 5.5 × 1017 cm-3 or less and low dislocation density with an average dislocation density of 500/cm2 or less can be obtained by adding a small amount of In with Si.A seed side end and a center portion of a straight body part of the GaAs ingot each have a silicon concentration of 2.0 × 1017 cm-3 or more and less than 1.5 × 1018 cm-3, an indium concentration of 1 × 1017 cm-3 or more and less than 6.5 × 1018 cm-3, a carrier concentration of 5.5 × 1017 cm-3 or less, and an average dislocation density of 500/cm2 or less.