TRANSISTOR

A transistor including a gate region penetrating into a first gallium nitride layer, wherein a second electrically-conductive layer coats at least one of the sides of said gate region.

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Bibliographische Detailangaben
Hauptverfasser:	ESCOFFIER, René, MOHAMAD, Blend
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A transistor including a gate region penetrating into a first gallium nitride layer, wherein a second electrically-conductive layer coats at least one of the sides of said gate region.