TRANSISTOR SWITCHES WITH ELECTROSTATIC DISCHARGE PROTECTION

Field effect transistors in an electronic switching device are provided with electrostatic discharge (ESD) protection elements electrically coupled to a first current terminal of each transistor (e.g., a source of each transistor or a drain of each transistor), allowing the electronic switching devi...

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Bibliographische Detailangaben
Hauptverfasser: Karaca, Denizhan, de Raad, Gijs Jan
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:Field effect transistors in an electronic switching device are provided with electrostatic discharge (ESD) protection elements electrically coupled to a first current terminal of each transistor (e.g., a source of each transistor or a drain of each transistor), allowing the electronic switching device to withstand ESD-induced currents without damage to the switching device.