DEPLETION MODE HIGH ELECTRON MOBILITY FIELD EFFECT TRANSISTOR (HEMT) SEMICONDUCTOR DEVICE HAVING BERYLLIUM DOPED SCHOTTKY CONTACT LAYERS

A semiconductor device having a substrate, a pair of Group III-Nitride layers on the substrate forming: a heterojunction with a 2 Dimensional Electron Gas (2DEG) channel in a lower one of the pair of Group III-Nitride layers, a cap beryllium doped Group III-Nitride layer on the upper one of the pair...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KOLIAS, Nicholas, J, SCHULTZ, Brian, D, LOGAN, John, LEONI, Robert, E, HWANG, Kiuchul
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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